IndiumV3, Main, Repository, bibRecord, 008858

Magnetism in transition-metal-doped In2O3 thin films

Identifieur interne : 008858 ( Main/Repository ); précédent : 008857; suivant : 008859

Magnetism in transition-metal-doped In2O3 thin films

Auteurs : RBID : Pascal:06-0364071

Descripteurs français

Pascal (Inist)
- Aimantation, Addition métal transition, Dopage, Moment magnétique, Microscopie force magnétique, Texture, Domaine magnétique, Ferromagnétisme, Indium oxyde, Couche mince, In2O3, 7570A.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Doping, Ferromagnetism, Indium oxides, Magnetic domains, Magnetic force microscopy, Magnetic moments, Magnetization, Texture, Thin films, Transition element additions.

Abstract

Laser ablated transition-metal (TM)-doped In₂O₃ thin films grown under appropriate conditions on both MgO and Al₂O₃ substrates can be well crystallized and ferromagnetic at room temperature. Of all the dopants, Ni seems to be the most promising candidate since doping Ni in In₂O₃ results in semiconducting films with the largest magnetic moment. Films are cluster-free. Magnetic force microscopy measurements confirm that the magnetic signals at room temperature are real. Moreover, compared to TM:In₂O₃ films deposited on MgO, films on Al₂O₃ have smaller grains and those are better connected, so that the film texture is smoother and the magnetic domains are more uniform. The size of ferromagnetic domains is determined to be about 1 μm. The room temperature ferromagnetism in V/Cr/Fe/Co/Ni-doped In₂O₃ films probably originates from the doped In₂O₃ matrices.

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Pascal:06-0364071

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Magnetism in transition-metal-doped In<sub>2</sub>
O<sub>3</sub>
 thin films</title>
<author><name>NGUYEN HOA HONG</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS-CEA, Université F. Rabelais, Pare de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Région Centre</region>
<settlement type="city">Tours</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Sakai, Joe" uniqKey="Sakai J">Joe Sakai</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science, JAIST, Asahidai 1-1</s1>
<s2>Nomi Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Nomi Ishikawa 923-1292</wicri:noRegion>
</affiliation>
</author>
<author><name>NGO THU HUONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science, JAIST, Asahidai 1-1</s1>
<s2>Nomi Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Nomi Ishikawa 923-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ruyter, Antoine" uniqKey="Ruyter A">Antoine Ruyter</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS-CEA, Université F. Rabelais, Pare de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Centre</region>
<settlement type="city">Tours</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Brize, Virginie" uniqKey="Brize V">Virginie Brize</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS-CEA, Université F. Rabelais, Pare de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Région Centre</region>
<settlement type="city">Tours</settlement>
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</author>
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<publicationStmt><idno type="inist">06-0364071</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 06-0364071 INIST</idno>
<idno type="RBID">Pascal:06-0364071</idno>
<idno type="wicri:Area/Main/Corpus">008B96</idno>
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<seriesStmt><idno type="ISSN">0953-8984</idno>
<title level="j" type="abbreviated">J. phys., Condens. matter : (Print)</title>
<title level="j" type="main">Journal of physics. Condensed matter : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Doping</term>
<term>Ferromagnetism</term>
<term>Indium oxides</term>
<term>Magnetic domains</term>
<term>Magnetic force microscopy</term>
<term>Magnetic moments</term>
<term>Magnetization</term>
<term>Texture</term>
<term>Thin films</term>
<term>Transition element additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Aimantation</term>
<term>Addition métal transition</term>
<term>Dopage</term>
<term>Moment magnétique</term>
<term>Microscopie force magnétique</term>
<term>Texture</term>
<term>Domaine magnétique</term>
<term>Ferromagnétisme</term>
<term>Indium oxyde</term>
<term>Couche mince</term>
<term>In2O3</term>
<term>7570A</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
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</teiHeader>
<front><div type="abstract" xml:lang="en">Laser ablated transition-metal (TM)-doped In<sub>2</sub>
O<sub>3</sub>
 thin films grown under appropriate conditions on both MgO and Al<sub>2</sub>
O<sub>3</sub>
 substrates can be well crystallized and ferromagnetic at room temperature. Of all the dopants, Ni seems to be the most promising candidate since doping Ni in In<sub>2</sub>
O<sub>3</sub>
 results in semiconducting films with the largest magnetic moment. Films are cluster-free. Magnetic force microscopy measurements confirm that the magnetic signals at room temperature are real. Moreover, compared to TM:In<sub>2</sub>
O<sub>3</sub>
 films deposited on MgO, films on Al<sub>2</sub>
O<sub>3</sub>
 have smaller grains and those are better connected, so that the film texture is smoother and the magnetic domains are more uniform. The size of ferromagnetic domains is determined to be about 1 μm. The room temperature ferromagnetism in V/Cr/Fe/Co/Ni-doped In<sub>2</sub>
O<sub>3</sub>
 films probably originates from the doped In<sub>2</sub>
O<sub>3</sub>
 matrices.</div>
</front>
</TEI>
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<fA08 i1="01" i2="1" l="ENG"><s1>Magnetism in transition-metal-doped In<sub>2</sub>
O<sub>3</sub>
 thin films</s1>
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<fA11 i1="01" i2="1"><s1>NGUYEN HOA HONG</s1>
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<fA11 i1="02" i2="1"><s1>SAKAI (Joe)</s1>
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<fA11 i1="03" i2="1"><s1>NGO THU HUONG</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>RUYTER (Antoine)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>BRIZE (Virginie)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS-CEA, Université F. Rabelais, Pare de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>School of Materials Science, JAIST, Asahidai 1-1</s1>
<s2>Nomi Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Laser ablated transition-metal (TM)-doped In<sub>2</sub>
O<sub>3</sub>
 thin films grown under appropriate conditions on both MgO and Al<sub>2</sub>
O<sub>3</sub>
 substrates can be well crystallized and ferromagnetic at room temperature. Of all the dopants, Ni seems to be the most promising candidate since doping Ni in In<sub>2</sub>
O<sub>3</sub>
 results in semiconducting films with the largest magnetic moment. Films are cluster-free. Magnetic force microscopy measurements confirm that the magnetic signals at room temperature are real. Moreover, compared to TM:In<sub>2</sub>
O<sub>3</sub>
 films deposited on MgO, films on Al<sub>2</sub>
O<sub>3</sub>
 have smaller grains and those are better connected, so that the film texture is smoother and the magnetic domains are more uniform. The size of ferromagnetic domains is determined to be about 1 μm. The room temperature ferromagnetism in V/Cr/Fe/Co/Ni-doped In<sub>2</sub>
O<sub>3</sub>
 films probably originates from the doped In<sub>2</sub>
O<sub>3</sub>
 matrices.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70E70A</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Aimantation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Magnetization</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Addition métal transition</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Transition element additions</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Dopage</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Doping</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Doping</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Moment magnétique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Magnetic moments</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Microscopie force magnétique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Magnetic force microscopy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Texture</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Texture</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Domaine magnétique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Magnetic domains</s0>
<s5>08</s5>
</fC03>
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<s5>09</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Ferromagnetism</s0>
<s5>09</s5>
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<fC03 i1="09" i2="3" l="FRE"><s0>Indium oxyde</s0>
<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Indium oxides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Thin films</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>7570A</s0>
<s4>INC</s4>
<s5>60</s5>
</fC03>
<fN21><s1>240</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Magnetism in transition-metal-doped In2O3 thin films

Magnetism in transition-metal-doped In2O3 thin films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri